Gas injection device with uniform gas velocity

Invention Grant

US08721835B2 Gas injection device with uniform gas velocity 有权

Title translation: 具有均匀气体速度的气体注入装置

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Patent Title: Gas injection device with uniform gas velocity
Patent Title (中): 具有均匀气体速度的气体注入装置
Application No.: US13638047

Application Date: 2011-03-25
Publication No.: US08721835B2

Publication Date: 2014-05-13
Inventor: Jacques Constant Stefan Kools
Applicant: Jacques Constant Stefan Kools
Applicant Address: FR Simiane Collongue
Assignee: Koolerheadz
Current Assignee: Koolerheadz
Current Assignee Address: FR Simiane Collongue
Agency: Panitch Schwarze Belisario & Nadel LLP
Priority: FR1001255 20100329; FR1001257 20100329
International Application: PCT/IB2011/051273 WO 20110325
International Announcement: WO2011/121507 WO 20111006
Main IPC: H01L21/306
IPC: H01L21/306 ; C23C16/455

Gas injection device with uniform gas velocity

Abstract:

Embodiments of the device relate to an injector (11) for injecting a gas in a processing chamber, including an inlet (21) for receiving a gas wave or a gas flow, a flow-shaping section (20) for expanding the gas in a direction (YY′) perpendicular to a propagation axis (XX′) of the gas, and an outlet (22) for expelling the gas. The flow-shaping section has first and second sidewalls (23) which diverge according to a divergence angle (A1) relative to the propagation axis of the gas, and includes means for slowing down the velocity of the gas near the center of the flow-shaping section, relative to the velocity of the gas near at least one sidewall.

Abstract(Chinese):

该装置的实施例涉及一种用于在处理室中喷射气体的喷射器（11），其包括用于接收气体波或气流的入口（21），用于使气体膨胀的流动成形部分（20）垂直于气体的传播轴线（XX'）的方向（YY'）和用于排出气体的出口（22）。流动成形部分具有根据相对于气体的传播轴线的发散角（A1）发散的第一和第二侧壁（23），并且包括用于减慢靠近气流的中心附近的气体的速度的装置，成形部分相对于至少一个侧壁附近的气体的速度。

Public/Granted literature

US20130019978A1 GAS INJECTION DEVICE WITH UNIFORM GAS VELOCITY Public/Granted day:2013-01-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）