Invention Grant
US08721961B2 Au—Sn alloy bump including no large void and method of producing same
有权
不含大孔的Au-Sn合金凸块及其制造方法
- Patent Title: Au—Sn alloy bump including no large void and method of producing same
- Patent Title (中): 不含大孔的Au-Sn合金凸块及其制造方法
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Application No.: US12094167Application Date: 2005-11-29
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Publication No.: US08721961B2Publication Date: 2014-05-13
- Inventor: Masayuki Ishikawa , Masayoshi Kohinata , Akifumi Mishima
- Applicant: Masayuki Ishikawa , Masayoshi Kohinata , Akifumi Mishima
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-336084 20051121
- International Application: PCT/JP2005/021838 WO 20051129
- International Announcement: WO2007/057982 WO 20070524
- Main IPC: C22C5/02
- IPC: C22C5/02
Abstract:
An Au—Sn alloy bump that does not include large voids and a method of producing the same are provided. The Au—Sn alloy bump that does not include large voids comprises a composition containing Sn: 20.5 to 23.5 mass % and the balance Au and unavoidable impurities, and a structure where 0.5 to 30 area % of Sn-rich primary crystal phase is crystallized in the matrix.
Public/Granted literature
- US20080304999A1 Au-Sn Alloy Bump Having no Trapped-In Large Void and Process for Producing the Same Public/Granted day:2008-12-11
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