Invention Grant
- Patent Title: Magnetic memory devices and methods of manufacturing such magnetic memory devices
- Patent Title (中): 磁存储器件和制造这种磁存储器件的方法
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Application No.: US12656145Application Date: 2010-01-19
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Publication No.: US08722211B2Publication Date: 2014-05-13
- Inventor: Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
- Applicant: Woojin Kim , Jangeun Lee , Sechung Oh , KyungTae Nam , Dae Kyom Kim , Junho Jeong
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0004679 20090120
- Main IPC: G11C11/15
- IPC: G11C11/15 ; G11B5/39 ; G11C11/14 ; G01R33/09 ; H01F10/10 ; H01F10/14 ; H01F10/16
Abstract:
A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer.
Public/Granted literature
- US20100183902A1 Magnetic memory devices and methods of manufacturing such magnetic memory devices Public/Granted day:2010-07-22
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