Invention Grant
US08722286B2 Devices and methods for improved reflective electron beam lithography
有权
用于改进反射电子束光刻的装置和方法
- Patent Title: Devices and methods for improved reflective electron beam lithography
- Patent Title (中): 用于改进反射电子束光刻的装置和方法
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Application No.: US13484588Application Date: 2012-05-31
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Publication No.: US08722286B2Publication Date: 2014-05-13
- Inventor: Chen-Hua Yu , Jaw-Jung Shin , Shy-Jay Lin , Burn Jeng Lin
- Applicant: Chen-Hua Yu , Jaw-Jung Shin , Shy-Jay Lin , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/20
- IPC: G03F1/20

Abstract:
A device for reflective electron-beam lithography and methods of producing the same are described. The device includes a substrate, a plurality of conductive layers formed on the substrate, which are parallel to each other and separated by insulating pillar structures, and a plurality of apertures in each conductive layer. Apertures in each conductive layer are vertically aligned with the apertures in other conductive layers and a periphery of each aperture includes conductive layers that are suspended.
Public/Granted literature
- US20130320225A1 DEVICES AND METHODS FOR IMPROVED REFLECTIVE ELECTRON BEAM LITHOGRAPHY Public/Granted day:2013-12-05
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