Invention Grant
US08722319B2 Pattern forming method, chemical amplification resist composition and resist film
有权
图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
- Patent Title: Pattern forming method, chemical amplification resist composition and resist film
- Patent Title (中): 图案形成方法，化学放大抗蚀剂组合物和抗蚀剂膜
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Application No.: US13245326Application Date: 2011-09-26
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Publication No.: US08722319B2Publication Date: 2014-05-13
- Inventor: Kaoru Iwato , Keita Kato
- Applicant: Kaoru Iwato , Keita Kato
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-217967 20100928
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A pattern forming method includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a tertiary alcohol; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.
Public/Granted literature
- US20120077122A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM Public/Granted day:2012-03-29
Information query
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