The production method for the oxidized carbon thin film of the present disclosure includes: a first step of preparing a carbon thin film and iron oxide that is in contact with the carbon thin film and contains Fe2O3; and a second step of forming an oxidized carbon thin film having an oxidized portion composed of oxidized carbon by applying a voltage or current between the carbon thin film and the iron oxide with the carbon thin film side being positive and thereby oxidizing a contact portion of the carbon thin film with the iron oxide to change it into the oxidized portion. This production method allows a pattern of nanometer order to be formed on a carbon thin film represented by graphene. The method causes less damage to the formed pattern and has high affinity with a semiconductor process, thereby enabling a wide range of applications as a process technique for producing an electronic device.