Invention Grant
US08722452B2 Method of forming optoelectronic conversion layer 有权
形成光电转换层的方法

  • Patent Title: Method of forming optoelectronic conversion layer
  • Patent Title (中): 形成光电转换层的方法
  • Application No.: US13400557
    Application Date: 2012-02-20
  • Publication No.: US08722452B2
    Publication Date: 2014-05-13
  • Inventor: Yi-Jiunn Chien
  • Applicant: Yi-Jiunn Chien
  • Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
  • Assignee: AU Optronics Corp.
  • Current Assignee: AU Optronics Corp.
  • Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
  • Agent Winston Hsu; Scott Margo
  • Priority: TW100126455A 20110726
  • Main IPC: H01L31/18
  • IPC: H01L31/18
Method of forming optoelectronic conversion layer
Abstract:
A method of forming optoelectronic conversion layer includes the following steps. A first substrate is provided, and an electrode layer is formed on the first substrate. A first metal precursor layer including one or plural of metal components is formed on the electrode layer. A second substrate is provided, and a nonmetal precursor layer including at least one nonmetal component is formed on the second substrate. The first substrate and the second substrate are then stacked so that the nonmetal precursor layer and the first metal precursor layer are in contact. A thermal treatment is performed to have the first metal precursor layer react with the nonmetal precursor layer for forming an optoelectronic conversion layer.
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