Invention Grant
- Patent Title: Compound semiconductor device and manufacture process thereof
- Patent Title (中): 化合物半导体器件及其制造方法
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Application No.: US13291576Application Date: 2011-11-08
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Publication No.: US08722476B2Publication Date: 2014-05-13
- Inventor: Yoichi Kamada
- Applicant: Yoichi Kamada
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2010-276317 20101210
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A compound semiconductor device includes a compound semiconductor layer, a gate electrode disposed above the compound semiconductor layer, and a gate insulation film. The gate insulation film is interposed between the compound semiconductor layer and the gate electrode. The gate insulation film contains a fluorine compound at least in the vicinity of the interface with the compound semiconductor layer.
Public/Granted literature
- US20120146134A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURE PROCESS THEREOF Public/Granted day:2012-06-14
Information query
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