Cascoded high voltage junction field effect transistor

Invention Grant

US08722477B2 Cascoded high voltage junction field effect transistor 有权

Title translation: 串联高压结场效应晶体管

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Patent Title: Cascoded high voltage junction field effect transistor
Patent Title (中): 串联高压结场效应晶体管
Application No.: US13350740

Application Date: 2012-01-14
Publication No.: US08722477B2

Publication Date: 2014-05-13
Inventor: Hideaki Tsuchiko
Applicant: Hideaki Tsuchiko
Applicant Address: US CA Sunnyvale
Assignee: Alpha and Omega Semiconductor Incorporated
Current Assignee: Alpha and Omega Semiconductor Incorporated
Current Assignee Address: US CA Sunnyvale
Agent Bo-In Lin
Main IPC: H01L21/337
IPC: H01L21/337

Cascoded high voltage junction field effect transistor

Abstract:

A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is connected to a drain electrode of another JFET stage.

Abstract(Chinese):

级联结场晶体管（JFET）器件包括级联到第二级低电压JFET的第一级高电压JFET，其中第一级JFET和第二级JFET之一连接到另一JFET级的漏极。

Public/Granted literature

US20120142149A1 CASCODED HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR Public/Granted day:2012-06-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/337	......带有PN结栅的