A method for forming an identification mark on a silicon carbide single crystal substrate according to the present invention includes: (a) scanning a principal surface of a silicon carbide single crystal substrate with a laser beam at a first energy density such that a groove is formed in the principal surface of the silicon carbide single crystal substrate, thereby forming an identification mark which is constituted of one or more grooves in the principal surface of the silicon carbide single crystal substrate; and (b) scanning an inside of the groove formed in the principal surface of the silicon carbide single crystal substrate with a laser beam at a second energy density that is lower than the first energy density.