Invention Grant
- Patent Title: Double solid metal pad with reduced area
- Patent Title (中): 双面实心金属垫,面积减小
-
Application No.: US14058862Application Date: 2013-10-21
-
Publication No.: US08722529B2Publication Date: 2014-05-13
- Inventor: Hsien-Wei Chen , Yu-Wen Liu , Hao-Yi Tsai , Shin-Puu Jeng , Ying-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
An integrated circuit structure includes a bond pad; an Mtop pad located directly underlying the bond pad; an Mtop-1 pad having at least a portion directly underlying the Mtop pad, wherein at least one of the Mtop pad and the Mtop-1 pad has a horizontal dimension smaller than a horizontal dimension of the bond pad; a plurality of vias interconnecting the Mtop pad and the Mtop-1 pad; and a bond ball on the bond pad. Each of the Mtop pad and the Mtop-1 pad has positive enclosures to the bond ball in all horizontal directions.
Public/Granted literature
- US20140045327A1 Double Solid Metal Pad with Reduced Area Public/Granted day:2014-02-13
Information query
IPC分类: