Barrier layer for copper interconnect

Invention Grant

US08722531B1 Barrier layer for copper interconnect 有权

Title translation: 铜互连屏障层

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Patent Title: Barrier layer for copper interconnect
Patent Title (中): 铜互连屏障层
Application No.: US13666792

Application Date: 2012-11-01
Publication No.: US08722531B1

Publication Date: 2014-05-13
Inventor: Yu-Hung Lin , Chi-Yu Chou , Kuei-Pin Lee , Chen-Kuang Lien , Yu-Chang Hsiao , Yao-Hsiang Liang , Yu-Min Chang
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater and Matsil, L.L.P.
Main IPC: H01L21/4763
IPC: H01L21/4763

Abstract:

A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming a metal-containing layer in the dielectric layer, forming a barrier layer overlying the metal-containing layer, and performing a thermal process to form a metal oxide layer underlying the conductive layer. The metal oxide layer is a barrier layer formed at the boundary between the dielectric layer and the metal-containing layer.

Abstract(Chinese):

形成互连结构的方法包括形成覆盖在基板上的电介质层，在电介质层中形成含金属层，形成覆盖在含金属层上的阻挡层，以及进行热处理以形成基底的金属氧化物层导电层。金属氧化物层是在电介质层和含金属层之间的边界处形成的阻挡层。

Public/Granted literature

US20140117547A1 BARRIER LAYER FOR COPPER INTERCONNECT Public/Granted day:2014-05-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）