Semiconductor device and a method for manufacturing a semiconductor device

Invention Grant

US08722532B2 Semiconductor device and a method for manufacturing a semiconductor device 有权

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and a method for manufacturing a semiconductor device
Patent Title (中): 半导体装置及其制造方法
Application No.: US13567546

Application Date: 2012-08-06
Publication No.: US08722532B2

Publication Date: 2014-05-13
Inventor: Tatsuya Usami , Hiroshi Kitajima
Applicant: Tatsuya Usami , Hiroshi Kitajima
Applicant Address: JP Kanagawa
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kanagawa
Agency: Young & Thompson
Priority: JP2011-201525 20110915
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device and a method for manufacturing a semiconductor device

Abstract:

A first wiring is disposed over a semiconductor substrate. A first via is disposed over the first wiring. Further, the bottom surface of the first via is in contact with the first wiring. A first insulation layer is disposed over the semiconductor substrate, and is in contact with at least the top surface of the first wiring and the side surface of the first via. At least a part of each side surface of the first wiring and the first via cuts off each metal crystal grain.

Abstract(Chinese):

第一布线设置在半导体衬底上。第一通孔布置在第一布线上。此外，第一通孔的底面与第一布线接触。第一绝缘层设置在半导体衬底上，并且至少与第一布线的顶表面和第一通孔的侧表面接触。第一布线和第一通孔的每个侧表面的至少一部分切断每个金属晶粒。

Public/Granted literature

US20130069238A1 SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2013-03-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）