A manufacturing method of a semiconductor device includes forming a structure comprising an interlayer dielectric layer on a substrate, an ultra-low-k material layer on the interlayer dielectric layer and a plug. The plug passes through the interlayer dielectric layer and the ultra-low-k material layer, and is formed of a first metal material. The method further includes removing an upper portion of the plug by etching to form a recessed portion, and filling the recessed portion with a second metal material. According to the method, contact-hole photolithography is performed only once, and thus avoids alignment issues that may occur when contact-hole photolithography needs to be performed twice.