Invention Grant
- Patent Title: Multi-sacrificial layer and method
- Patent Title (中): 多牺牲层和方法
-
Application No.: US12686878Application Date: 2010-01-13
-
Publication No.: US08722537B2Publication Date: 2014-05-13
- Inventor: Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
- Applicant: Yao-Te Huang , Chia-Hua Chu , Yu-Nu Hsu , Chun-Wen Cheng , Li-Chung Peng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
MEMS devices and methods for utilizing sacrificial layers are provided. An embodiment comprises forming a first sacrificial layer and a second sacrificial layer over a substrate, wherein the second sacrificial layer acts as an adhesion layer. Once formed, the first sacrificial layer and the second sacrificial layer are patterned such that the second sacrificial layer is undercut to form a step between the first sacrificial layer and the second sacrificial layer. A top capacitor electrode is formed over the second sacrificial layer, and the first sacrificial layer and the second sacrificial layer are removed in order to free the top capacitor electrode.
Public/Granted literature
- US20100240215A1 Multi-Sacrificial Layer and Method Public/Granted day:2010-09-23
Information query
IPC分类: