Invention Grant
- Patent Title: Method of cleaning and micro-etching semiconductor wafers
- Patent Title (中): 半导体晶片的清洗和微蚀刻方法
-
Application No.: US12904609Application Date: 2010-10-14
-
Publication No.: US08722544B2Publication Date: 2014-05-13
- Inventor: Robert K. Barr , Raymond Chan
- Applicant: Robert K. Barr , Raymond Chan
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent John J. Piskorski
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; C11D7/32 ; C25F3/00

Abstract:
A method of simultaneously cleaning inorganic and organic contaminants from semiconductor wafers and micro-etching the semiconductor wafers. After the semiconductor wafers are cut or sliced from ingots, they are contaminated with cutting fluid as well as metal and metal oxides from the saws used in the cutting process. Aqueous alkaline cleaning and micro-etching solutions containing alkaline compounds and mid-range alkoxylates are used to simultaneously clean and micro-etch the semiconductor wafers.
Public/Granted literature
- US20110250762A1 METHOD OF CLEANING AND MICRO-ETCHING SEMICONDUCTOR WAFERS Public/Granted day:2011-10-13
Information query
IPC分类: