Invention Grant
US08722549B2 Semiconductor device capable of reducing plasma induced damage and fabrication method thereof
有权
能够降低等离子体诱发损伤的半导体装置及其制造方法
- Patent Title: Semiconductor device capable of reducing plasma induced damage and fabrication method thereof
- Patent Title (中): 能够降低等离子体诱发损伤的半导体装置及其制造方法
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Application No.: US13316454Application Date: 2011-12-09
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Publication No.: US08722549B2Publication Date: 2014-05-13
- Inventor: Ming Zhou
- Applicant: Ming Zhou
- Applicant Address: CN
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201110262629 20110907
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method of fabricating a semiconductor device having reduced plasma-induced damage includes providing a p-type semiconductor substrate. The p-type semiconductor substrate has a front surface including the semiconductor device and a back surface. The method further includes doping the back surface with an n-type dopant to form an n-type semiconductor region before forming metal interconnections on the front surface. The n-type semiconductor region and the p-type semiconductor substrate form a pn junction. The method also includes forming an insulation layer on an exposed surface of the n-type semiconductor region.
Public/Granted literature
- US20130056856A1 SEMICONDUCTOR DEVICE CAPABLE OF REDUCING PLASMA INDUCED DAMAGE AND FABRICATION METHOD THEREOF Public/Granted day:2013-03-07
Information query
IPC分类:
