Invention Grant
- Patent Title: Light detector with Ge film
- Patent Title (中): 光电探测器与Ge膜
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Application No.: US13595743Application Date: 2012-08-27
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Publication No.: US08723123B2Publication Date: 2014-05-13
- Inventor: Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
- Applicant: Alexander Kalnitsky , Chia-Hua Chu , Fei-Lung Lai , Chun-Wen Cheng , Chun-Ren Cheng , Yi-Hsien Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: G01J5/20
- IPC: G01J5/20
Abstract:
A light detector includes a first light sensor and a second light sensor to detect incident light. A Ge film is disposed over the first light sensor to pass infra-red (IR) wavelength light and to block visible wavelength light. The Ge film does not cover the second light sensor.
Public/Granted literature
- US20140054461A1 LIGHT DETECTOR WITH GE FILM Public/Granted day:2014-02-27
Information query
