Invention Grant
US08723179B2 Thin film transistor panel having an etch stopper on semiconductor
有权
薄膜晶体管板在半导体上具有蚀刻停止层
- Patent Title: Thin film transistor panel having an etch stopper on semiconductor
- Patent Title (中): 薄膜晶体管板在半导体上具有蚀刻停止层
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Application No.: US12957743Application Date: 2010-12-01
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Publication No.: US08723179B2Publication Date: 2014-05-13
- Inventor: Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
- Applicant: Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0012957 20100211
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20
Abstract:
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
Public/Granted literature
- US20110193076A1 THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF Public/Granted day:2011-08-11
Information query
IPC分类:
