Invention Grant
- Patent Title: Light emitting device
- Patent Title (中): 发光装置
-
Application No.: US13852015Application Date: 2013-03-28
-
Publication No.: US08723196B2Publication Date: 2014-05-13
- Inventor: Satoshi Seo , Daisuke Kumaki , Hisao Ikeda , Junichiro Sakata
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-278520 20040924; JP2004-316089 20041029; JP2004-316228 20041029
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, a light-emitting element includes a first layer generating holes, a second layer including a light-emitting layer for each emission color and a third layer generating electrons between an anode and a cathode, and the thickness of the first layer is different depending on each layer including the light-emitting layer for each emission color. A layer in which an organic compound and a metal oxide are mixed is used as the first layer, and thus, the driving voltage is not increased even when the thickness is increased, which is preferable.
Public/Granted literature
- US20130214307A1 LIGHT EMITTING DEVICE Public/Granted day:2013-08-22
Information query
IPC分类: