Invention Grant
- Patent Title: Nitride semiconductor light emitting device and method of manufacturing the same
- Patent Title (中): 氮化物半导体发光器件及其制造方法
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Application No.: US12768718Application Date: 2010-04-27
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Publication No.: US08723197B2Publication Date: 2014-05-13
- Inventor: Suk Hun Lee
- Applicant: Suk Hun Lee
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2004-0067496 20040826
- Main IPC: H01L33/32
- IPC: H01L33/32
Abstract:
A semiconductor light emitting device including a first semiconductor layer, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, and at least one SiNx cluster layer formed between the first semiconductor layer and the second semiconductor layer.
Public/Granted literature
- US20100200877A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-08-12
Information query
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