Invention Grant
US08723226B2 Manufacturable enhancement-mode group III-N HEMT with a reverse polarization cap
有权
具有反极化帽的可制造的增强型组III-N HEMT
- Patent Title: Manufacturable enhancement-mode group III-N HEMT with a reverse polarization cap
- Patent Title (中): 具有反极化帽的可制造的增强型组III-N HEMT
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Application No.: US13302997Application Date: 2011-11-22
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Publication No.: US08723226B2Publication Date: 2014-05-13
- Inventor: Sandeep Bahl
- Applicant: Sandeep Bahl
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
An enhancement-mode group III-N high electron mobility transistor (HEMT) with a reverse polarization cap is formed in a method that utilizes a reverse polarization cap structure, such as an InGaN cap structure, to deplete the two-dimensional electron gas (2DEG) and form a normally off device, and a spacer layer that lies below the reverse polarization cap structure and above the barrier layer of the HEMT which allows the reverse polarization cap layer to be etched without etching into the barrier layer.
Public/Granted literature
- US20130126889A1 Manufacturable Enhancement-Mode Group III-N HEMT with a Reverse Polarization Cap Public/Granted day:2013-05-23
Information query
IPC分类:
