Invention Grant
- Patent Title: Voids in STI regions for forming bulk FinFETs
- Patent Title (中): 在STI区域中形成大块FinFET的空隙
-
Application No.: US13918728Application Date: 2013-06-14
-
Publication No.: US08723271B2Publication Date: 2014-05-13
- Inventor: Feng Yuan , Tsung-Lin Lee , Hung-Ming Chen , Chang-Yun Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L27/02
- IPC: H01L27/02
Abstract:
An integrated circuit structure includes a substrate; two insulation regions over the substrate, with one of the two insulation regions including a void therein; and a first semiconductor strip between and adjoining the two insulation regions. The first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions.
Public/Granted literature
- US20130277757A1 Voids in STI Regions for Forming Bulk FinFETs Public/Granted day:2013-10-24
Information query
IPC分类:
