Invention Grant
US08723276B2 Semiconductor structure with lamella defined by singulation trench
有权
具有薄片的半导体结构由切割沟槽定义
- Patent Title: Semiconductor structure with lamella defined by singulation trench
- Patent Title (中): 具有薄片的半导体结构由切割沟槽定义
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Application No.: US12898221Application Date: 2010-10-05
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Publication No.: US08723276B2Publication Date: 2014-05-13
- Inventor: Boris Binder , Bernd Foeste , Thoralf Kautzsch , Stefan Kolb , Marco Mueller
- Applicant: Boris Binder , Bernd Foeste , Thoralf Kautzsch , Stefan Kolb , Marco Mueller
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/84
- IPC: H01L29/84
Abstract:
A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench.
Public/Granted literature
- US20110068420A1 Semiconductor Structure with Lamella Defined by Singulation Trench Public/Granted day:2011-03-24
Information query
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