Invention Grant
US08723277B2 Tunable MEMS device and method of making a tunable MEMS device
有权
可调谐MEMS器件和制造可调MEMS器件的方法
- Patent Title: Tunable MEMS device and method of making a tunable MEMS device
- Patent Title (中): 可调谐MEMS器件和制造可调MEMS器件的方法
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Application No.: US13408928Application Date: 2012-02-29
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Publication No.: US08723277B2Publication Date: 2014-05-13
- Inventor: Alfons Dehe , Martin Wurzer , Christian Herzum , Wolfgang Klein , Stefan Barzen
- Applicant: Alfons Dehe , Martin Wurzer , Christian Herzum , Wolfgang Klein , Stefan Barzen
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A tunable MEMS device and a method of manufacturing a tunable MEMS device are disclosed. In accordance with an embodiment of the present invention, a semiconductor device comprises a substrate, a moveable electrode and a counter electrode. The moveable electrode or the counter electrode comprises a first region and a second region, wherein the first region is isolated from the second region, wherein the first region is configured to be tuned, wherein the second region is configured to provide a sensing signal or control a system, and wherein the moveable electrode and the counter electrode are mechanically connected to the substrate.
Public/Granted literature
- US20130221453A1 Tunable MEMS Device and Method of Making a Tunable MEMS Device Public/Granted day:2013-08-29
Information query
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