Invention Grant
- Patent Title: MEMS sensor, and MEMS sensor manufacturing method
- Patent Title (中): MEMS传感器和MEMS传感器制造方法
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Application No.: US12670406Application Date: 2008-07-22
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Publication No.: US08723279B2Publication Date: 2014-05-13
- Inventor: Goro Nakatani , Mizuho Okada , Nobuhisa Yamashita
- Applicant: Goro Nakatani , Mizuho Okada , Nobuhisa Yamashita
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2007-192201 20070724; JP2007-192205 20070724; JP2007-192206 20070724
- International Application: PCT/JP2008/063134 WO 20080722
- International Announcement: WO2009/014118 WO 20090129
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.
Public/Granted literature
- US20100193886A1 MEMS SENSOR, AND MEMS SENSOR MANUFACTURING METHOD Public/Granted day:2010-08-05
Information query
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