Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13592949Application Date: 2012-08-23
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Publication No.: US08723291B2Publication Date: 2014-05-13
- Inventor: Toshiaki Yonezu , Takeshi Iwamoto , Shigeki Obayashi , Masashi Arakawa , Kazushi Kono
- Applicant: Toshiaki Yonezu , Takeshi Iwamoto , Shigeki Obayashi , Masashi Arakawa , Kazushi Kono
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2006-219370 20060811; JP2007-30263 20070209
- Main IPC: H01L23/62
- IPC: H01L23/62

Abstract:
A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut by current exceeding a predetermined value. A first electrode pad is connected to one side of a fuse wiring, a second electrode pad is connected to the other of a fuse wiring, a pollution-control layer is formed in the upper layer and the lower layer of the fuse wiring via an insulating layer. In the fuse wiring, second via hole wiring of a pair is formed in the outside of a first via hole wiring so that the first the via hole wiring is surrounded.
Public/Granted literature
- US20130049166A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2013-02-28
Information query
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