The present invention makes it possible to inhibit an SOA (Safe Operating Area) in a vertical-type bipolar transistor from narrowing. A p-type base layer 150 includes a first peak, a second peak, and a third peak in an impurity profile in the thickness direction. The first peak is located on the topmost surface side of a semiconductor substrate 100. The second peak is located closer to the bottom face side of the semiconductor substrate 100 than the first peak and higher than the first peak. The third peak is located between the first peak and the second peak.