A method of metal sputtering, comprising the following steps. A wafer holder and inner walls of a chamber are coated with a seasoning layer comprised of: a) a material etchable in a metal barrier layer etch process; or b) an insulating or non-conductive material. A wafer having two or more wafer conductive structures is placed upon the seasoning layer coated wafer holder. The wafer is cleaned wherein a portion of the seasoning layer is re-deposited upon the wafer over and between adjacent wafer conductive structures. A metal barrier layer is formed over the wafer. The wafer is removed from the chamber and at least two adjacent upper metal structures are formed over at least one portion of the metal barrier layer. The portions of the metal barrier layer not under the at least two adjacent upper metal structures are etched and removed from over the wafer exposing portions of the re-deposited seasoning layer portions using the metal barrier layer etch process which also removes any exposed portions of the re-deposited seasoning layer portions that are comprised of a material etchable in the metal barrier layer etch process.