Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13356139Application Date: 2012-01-23
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Publication No.: US08723331B2Publication Date: 2014-05-13
- Inventor: Noriteru Yamada
- Applicant: Noriteru Yamada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-033210 20110218
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Certain embodiments provide a semiconductor device including a first line, a second line, and a sacrificial line. The second line is connected to the first line, and has a narrower linewidth than the first line. The sacrificial line is a wiring having its one end connected to the first line, and its another end as an open end. Further, the sacrificial line at least partially has a portion with a narrower linewidth than the second line.
Public/Granted literature
- US20120211898A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-08-23
Information query
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