Invention Grant
US08723339B2 Semiconductor device with front and back side resin layers having different thermal expansion coefficient and elasticity modulus 有权
具有不同热膨胀系数和弹性模量的正面和背面树脂层的半导体器件

  • Patent Title: Semiconductor device with front and back side resin layers having different thermal expansion coefficient and elasticity modulus
  • Patent Title (中): 具有不同热膨胀系数和弹性模量的正面和背面树脂层的半导体器件
  • Application No.: US14083492
    Application Date: 2013-11-19
  • Publication No.: US08723339B2
    Publication Date: 2014-05-13
  • Inventor: Masaki KasaiOsamu Miyata
  • Applicant: Rohm Co., Ltd.
  • Applicant Address: JP Kyoto
  • Assignee: Rohm Co., Ltd.
  • Current Assignee: Rohm Co., Ltd.
  • Current Assignee Address: JP Kyoto
  • Agency: Rabin & Berdo, P.C.
  • Priority: JP2005-189571 20050629; JP2005-189572 20050629
  • Main IPC: H01L23/29
  • IPC: H01L23/29
Semiconductor device with front and back side resin layers having different thermal expansion coefficient and elasticity modulus
Abstract:
Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.
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