Invention Grant
- Patent Title: Surface acoustic wave device, electronic apparatus, and sensor apparatus
- Patent Title (中): 声表面波装置,电子仪器和传感器装置
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Application No.: US13223411Application Date: 2011-09-01
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Publication No.: US08723394B2Publication Date: 2014-05-13
- Inventor: Naohisa Obata , Kunihito Yamanaka
- Applicant: Naohisa Obata , Kunihito Yamanaka
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2010-201752 20100909
- Main IPC: H03H9/25
- IPC: H03H9/25

Abstract:
A SAW device has an IDT which is provided in the principal surface of a quartz crystal substrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, |ψ|≠90°×n (where n=0, 1, 2, 3)) and excites a Rayleigh wave (wavelength: λ) in a stopband upper end mode. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT. The depth G of the inter-electrode-finger grooves is 0.01λ≦G≦0.07λ, and an electrode finger thickness H and an IDT line occupancy η satisfy a predetermined relationship. Thus, a frequency-temperature characteristic constantly has an inflection point between a maximum value and a minimum value in an operation temperature range, thereby suppressing a fluctuation in an inflection-point temperature due to a manufacturing variation in the IDT line occupancy η.
Public/Granted literature
- US20120086308A1 Surface acoustic wave device, electronic apparatus, and sensor apparatus Public/Granted day:2012-04-12
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