Invention Grant
- Patent Title: Linear stage and metrology architecture for reflective electron beam lithography
- Patent Title (中): 反射电子束光刻的线性阶段和计量结构
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Application No.: US13914351Application Date: 2013-06-10
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Publication No.: US08724115B2Publication Date: 2014-05-13
- Inventor: Upendra Ummethala , Layton Hale , Josh Clyne , Samir Nayfeh , Mark Williams , Joseph A. DiRegolo , Andrew Wilson
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Suiter Swantz pc llo
- Main IPC: G01B11/02
- IPC: G01B11/02
Abstract:
A stage metrology suitable for REBL includes an interferometer stage metrology system configured to measure the position and rotation of a short-stroke wafer scanning stage, wherein the interferometer metrology system includes two or more interferometers for each axis of measurement, wherein a first interferometer mirror is disposed on a first surface of the short-stroke wafer scanning stage and a second interferometer mirror is disposed on a second surface of the short-stroke wafer scanning stage, and a control system configured to determine a shape error for the first interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the first interferometer mirror and a shape error for the second interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the second interferometer mirror.
Public/Granted literature
- US20130342827A1 Linear Stage and Metrology Architecture for Reflective Electron Beam Lithography Public/Granted day:2013-12-26
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