Invention Grant
US08724418B2 Memory cell of semiconductor memory device and method for driving the same
有权
半导体存储器件的存储单元及其驱动方法
- Patent Title: Memory cell of semiconductor memory device and method for driving the same
- Patent Title (中): 半导体存储器件的存储单元及其驱动方法
-
Application No.: US13461186Application Date: 2012-05-01
-
Publication No.: US08724418B2Publication Date: 2014-05-13
- Inventor: Tae-Hoon Kim , Sung-Mook Kim
- Applicant: Tae-Hoon Kim , Sung-Mook Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0005879 20120118
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G11C17/18 ; G11C29/02 ; G11C29/00
Abstract:
A semiconductor memory device includes a first fuse having one end coupled with a first bit line and configured to be programmed with a data, a second fuse having one end coupled with a second bit line and configured to be programmed with the data; a program controller coupled with the other ends of the first fuse and the second fuse and configured to perform a program operation on at least one of the first fuse and the second fuse in response to a program voltage, and a read controller coupled with the other ends of the first fuse and the second fuse and configured to perform a read operation on the first fuse and the second fuse in response to a read voltage.
Public/Granted literature
- US20130182518A1 MEMORY CELL OF SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME Public/Granted day:2013-07-18
Information query
