Invention Grant
- Patent Title: Fault-tolerant non-volatile integrated circuit memory
- Patent Title (中): 容错非易失性集成电路存储器
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Application No.: US13556593Application Date: 2012-07-24
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Publication No.: US08725937B2Publication Date: 2014-05-13
- Inventor: William H. Radke
- Applicant: William H. Radke
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
Apparatus and methods are disclosed, such as those that store data in a plurality of non-volatile integrated circuit memory devices, such as NAND flash, with convolutional encoding. A relatively high code rate for the convolutional code consumes relatively little extra memory space. In one embodiment, the convolutional code is spread over portions of a plurality of memory devices, rather than being concentrated within a page of a particular memory device. In one embodiment, a code rate of m/n is used, and the convolutional code is stored across n memory devices.
Public/Granted literature
- US20120290902A1 FAULT-TOLERANT NON-VOLATILE INTEGRATED CIRCUIT MEMORY Public/Granted day:2012-11-15
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