Provided is a pot-shaped copper sputtering target manufactured with die forging, wherein the Vickers hardness Hv at all locations of the inner surface of the pot-shaped target is 70 or greater. With this pot-shaped copper sputtering target, the average crystal grain size in the target structure is 65 μm or less. Further, the inner surface of the pot-shaped target comprises crystalline orientations of (220), (111), (200), (311) obtained by X-ray diffraction, and the crystalline orientation of the face subject to erosion of the pot-shaped target is of a (220) primary orientation. An object of the present invention is to obtain a manufacturing method of a high quality sputtering target by improving and devising the forging process and heat treatment process to make the crystal grain size refined and uniform, and to obtain a high-quality sputtering target.