Invention Grant
- Patent Title: Process for forming a film, piezoelectric film, piezoelectric device, and liquid discharge apparatus
- Patent Title (中): 用于形成膜，压电膜，压电装置和液体排出装置的方法
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Application No.: US11905130Application Date: 2007-09-27
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Publication No.: US08728283B2Publication Date: 2014-05-20
- Inventor: Takamichi Fujii , Yukio Sakashita
- Applicant: Takamichi Fujii , Yukio Sakashita
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2006-263978 20060928
- Main IPC: C23C14/46
- IPC: C23C14/46 ; C23C14/34
Abstract:
Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (° C.), a difference Vs−Vf (V), which is the difference between a plasma potential Vs (V) in the plasma at the time of the film formation and a floating potential Vf (V), and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied: Ts(° C.)≧400 (1) −0.2Ts+100
Public/Granted literature
- US20080081216A1 Process for forming a film, piezoelectric film, piezoelectric device, and liquid discharge apparatus Public/Granted day:2008-04-03
Information query
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