Invention Grant
- Patent Title: Oxynitride sputtering target
- Patent Title (中): 氧氮化物溅射靶
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Application No.: US12593993Application Date: 2008-03-26
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Publication No.: US08728287B2Publication Date: 2014-05-20
- Inventor: Michel Martin , Philippe Maurin-Perrier , Olivier Blandenet
- Applicant: Michel Martin , Philippe Maurin-Perrier , Olivier Blandenet
- Applicant Address: FR Andrezieux Boutheon
- Assignee: H.E.F.
- Current Assignee: H.E.F.
- Current Assignee Address: FR Andrezieux Boutheon
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Priority: FR0754340 20070406
- International Application: PCT/FR2008/050520 WO 20080326
- International Announcement: WO2008/132409 WO 20081106
- Main IPC: C25B9/00
- IPC: C25B9/00 ; C23C14/00 ; C25B11/00 ; C25B13/00 ; C04B35/26 ; C04B35/64 ; H01F1/00 ; H01J7/18 ; H01J35/20 ; H01K1/56 ; H01B1/06 ; H01B1/24 ; H01J37/34 ; C23C14/06 ; C23C14/08 ; H01M6/18 ; H01M6/40 ; H01M10/0562 ; H01M2/14 ; H01M10/058
Abstract:
A cathode sputtering target includes: between 30 and 40 atomic % of a metal, between 2 and 10 atomic % of nitrogen, and between 35 and 50 atomic % of oxygen. The remainder up to 100% is constituted by at least one element selected from the group that comprises phosphorous (P), boron (B), silicon (Si), germanium (Ge), gallium (Ga), sulphur (S) and aluminium (Al). Also provides a method of manufacturing a thin film from the target, and an electrochemical device comprising the thin film.
Public/Granted literature
- US20100129722A1 OXYNITRIDE SPUTTERING TARGET Public/Granted day:2010-05-27
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