Invention Grant
US08728358B2 Sintered compact, amorphous film and crystalline film of composite oxide, and process for producing the films
有权
复合氧化物的烧结体,无定形膜和结晶膜,以及膜的制造方法
- Patent Title: Sintered compact, amorphous film and crystalline film of composite oxide, and process for producing the films
- Patent Title (中): 复合氧化物的烧结体,无定形膜和结晶膜,以及膜的制造方法
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Application No.: US13592520Application Date: 2012-08-23
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Publication No.: US08728358B2Publication Date: 2014-05-20
- Inventor: Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
- Applicant: Masakatsu Ikisawa , Masataka Yahagi , Kozo Osada , Takashi Kakeno
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2007-183799 20070713
- Main IPC: H01B1/08
- IPC: H01B1/08 ; B05D5/00 ; C23C14/08

Abstract:
An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.
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