Invention Grant
US08728622B2 Single-crystal substrate, group-III nitride crystal obtained using the same, and process for producing group-III nitride crystal
有权
使用其获得的单晶衬底，III族氮化物晶体以及III族氮化物晶体的制造方法
- Patent Title: Single-crystal substrate, group-III nitride crystal obtained using the same, and process for producing group-III nitride crystal
- Patent Title (中): 使用其获得的单晶衬底，III族氮化物晶体以及III族氮化物晶体的制造方法
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Application No.: US13548829Application Date: 2012-07-13
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Publication No.: US08728622B2Publication Date: 2014-05-20
- Inventor: Kenji Fujito , Yasuhiro Uchiyama
- Applicant: Kenji Fujito , Yasuhiro Uchiyama
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Chemical Corporation
- Current Assignee: Mitsubishi Chemical Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-007307 20100115
- Main IPC: C30B7/00
- IPC: C30B7/00 ; C30B9/00 ; B32B1/00 ; B32B3/00 ; B32B17/10 ; B32B19/00 ; B32B9/00 ; C30B25/18 ; C30B29/40 ; H01L21/02
Abstract:
Provided is a base substrate with which a Group-III nitride crystal having a large area and a large thickness can be grown while inhibiting crack generation. A single-crystal substrate for use in growing a Group-III nitride crystal thereon, which satisfies the following expression (1), wherein Z1 (μm) is an amount of warpage of physical shape in a growth surface of the single-crystal substrate and Z2 (μm) is an amount of warpage calculated from a radius of curvature of crystallographic-plane shape in a growth surface of the single-crystal substrate: −40
Public/Granted literature
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