Invention Grant
- Patent Title: Manufacturing method of magneto-resistive element
- Patent Title (中): 磁阻元件的制造方法
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Application No.: US13494797Application Date: 2012-06-12
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Publication No.: US08728830B2Publication Date: 2014-05-20
- Inventor: Kazumasa Nishimura
- Applicant: Kazumasa Nishimura
- Applicant Address: JP Kawasaki-Shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2009-298254 20091228
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The present invention provides a manufacturing method of a magneto-resistive element capable of obtaining a higher MR ratio, in a method of forming a metal oxide layer (e.g., MgO layer) by oxidation treatment of a metal layer (e.g., Mg layer). An embodiment of the present invention includes the steps of; providing a substrate having a first ferromagnetic layer; fabricating a tunnel barrier layer on the first ferromagnetic layer; and forming a second ferromagnetic layer on the tunnel barrier layer. The step of fabricating the tunnel barrier layer includes; the steps of; depositing a first metal layer on the first ferromagnetic layer; oxidizing the first metal layer; depositing a second metal layer on the oxidized first metal layer; and performing heating treatment on the oxidized first metal layer and the second metal layer at a temperature at which the second metal layer boils.
Public/Granted literature
- US20120288963A1 MANUFACTURING METHOD OF MAGNETO-RESISTIVE ELEMENT Public/Granted day:2012-11-15
Information query
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