Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13540445Application Date: 2012-07-02
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Publication No.: US08728834B2Publication Date: 2014-05-20
- Inventor: Yuan-Hsiao Chang
- Applicant: Yuan-Hsiao Chang
- Applicant Address: TW Hsinchu City
- Assignee: Phostek, Inc.
- Current Assignee: Phostek, Inc.
- Current Assignee Address: TW Hsinchu City
- Agency: Huffman Law Group, PC
- Priority: TW101119907A 20120604
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device.
Public/Granted literature
- US20130320358A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-12-05
Information query
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