Invention Grant
- Patent Title: Nitride semiconductor light emitting element and method for manufacturing same
- Patent Title (中): 氮化物半导体发光元件及其制造方法
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Application No.: US13580941Application Date: 2011-02-04
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Publication No.: US08728843B2Publication Date: 2014-05-20
- Inventor: Hirofumi Kawaguchi , Akinori Yoneda , Hiroshi Doi
- Applicant: Hirofumi Kawaguchi , Akinori Yoneda , Hiroshi Doi
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: JP2010-041314 20100226
- International Application: PCT/JP2011/052358 WO 20110204
- International Announcement: WO2011/105194 WO 20110901
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes include a conductive region of a first layer which has the conductive region and an insulated region.
Public/Granted literature
- US20130009195A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME Public/Granted day:2013-01-10
Information query
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