Invention Grant
US08728843B2 Nitride semiconductor light emitting element and method for manufacturing same 有权
氮化物半导体发光元件及其制造方法

Nitride semiconductor light emitting element and method for manufacturing same
Abstract:
A nitride semiconductor light emitting element has; a laminate of a first conduction type semiconductor layer, a light emitting layer and a second conduction type semiconductor layer of a different conduction type from that of the first conduction type semiconductor layer; and electrodes with a laminate structure formed on the first conduction type semiconductor layer, the electrodes include a conductive region of a first layer which has the conductive region and an insulated region.
Information query
Patent Agency Ranking
0/0