Invention Grant
- Patent Title: Solid-state imaging device and method for manufacturing the same
- Patent Title (中): 固态成像装置及其制造方法
-
Application No.: US13366505Application Date: 2012-02-06
-
Publication No.: US08728847B2Publication Date: 2014-05-20
- Inventor: Yasushi Maruyama , Hideshi Abe , Hiroyuki Mori
- Applicant: Yasushi Maruyama , Hideshi Abe , Hiroyuki Mori
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2003-374627 20031104
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for manufacturing a solid-state imaging device including: forming photo sensor portions in a silicon substrate; forming a wiring portion above said silicon substrate; bonding another substrate onto said wiring portion; removing said substrate in response to performing the bonding of the another substrate onto the wiring portion; and sequentially forming an anti-reflective coating on the silicon substrate, a color filter on the anti-reflective coating, and an on-chip lens.
Public/Granted literature
- US20120135559A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-05-31
Information query
IPC分类:
