Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13764564Application Date: 2013-02-11
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Publication No.: US08728876B2Publication Date: 2014-05-20
- Inventor: Eiji Kurose
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Priority: JP2012-030606 20120215
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The invention prevents a conductive fuse blown out by laser trimming from reconnecting by a plating electrode in a plating process and prevents a plating solution etc from entering a fuse blowout portion. On a semiconductor substrate of a multilayered wiring structure including a fuse blowout groove formed by blowing out a conductive fuse by laser trimming in a trimming element forming region, a second protection layer is formed so as to cover the trimming element forming region and then a plating electrode is formed on an draw-out pad electrode made of a topmost metal wiring. A third protection layer is then formed so as to cover the semiconductor substrate including the second protection layer and have an opening on the plating electrode.
Public/Granted literature
- US20130210200A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2013-08-15
Information query
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