Invention Grant
- Patent Title: Graphene electronic device and method of fabricating the same
- Patent Title (中): 石墨烯电子器件及其制造方法
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Application No.: US13329842Application Date: 2011-12-19
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Publication No.: US08728880B2Publication Date: 2014-05-20
- Inventor: Hyun-jong Chung , Jin-seong Heo , Hee-jun Yang , Sun-ae Seo , Sung-hoon Lee
- Applicant: Hyun-jong Chung , Jin-seong Heo , Hee-jun Yang , Sun-ae Seo , Sung-hoon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0129995 20101217
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.
Public/Granted literature
- US20120175595A1 Graphene Electronic Device And Method Of Fabricating The Same Public/Granted day:2012-07-12
Information query
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