Method for fabricating capacitor of semiconductor device

Invention Grant

US08728887B2 Method for fabricating capacitor of semiconductor device 有权

Title translation: 制造半导体器件电容器的方法

Please log in to see more content

Patent Title: Method for fabricating capacitor of semiconductor device
Patent Title (中): 制造半导体器件电容器的方法
Application No.: US13468319

Application Date: 2012-05-10
Publication No.: US08728887B2

Publication Date: 2014-05-20
Inventor: Jeong-Yeop Lee , Hyung-Soon Park , Young-Bang Lee , Su-Young Kim
Applicant: Jeong-Yeop Lee , Hyung-Soon Park , Young-Bang Lee , Su-Young Kim
Applicant Address: KR Gyeonggi-do
Assignee: Hynix Semiconductor
Current Assignee: Hynix Semiconductor
Current Assignee Address: KR Gyeonggi-do
Agency: IP & T Group LLP
Priority: KR10-2011-0142217 20111226
Main IPC: H01L21/8242
IPC: H01L21/8242

Method for fabricating capacitor of semiconductor device

Abstract:

A method for fabricating a capacitor of a semiconductor device includes sequentially forming an etch-stop layer and a mold layer over a substrate, sequentially forming a support layer and a hard mask pattern over the mold layer, forming a storage node hole by etching the support layer and the mold layer using the hard mask pattern as an etch barrier, forming a barrier layer on the sidewall of the mold layer inside the storage node hole, etching the etch-stop layer under the storage node hole, forming a storage node inside the storage node hole, and removing the hard mask pattern, the mold layer, and the barrier layer.

Abstract(Chinese):

一种用于制造半导体器件的电容器的方法包括在衬底上顺序地形成蚀刻停止层和模具层，在模具层上依次形成支撑层和硬掩模图案，通过蚀刻支撑体形成存储节点孔层和模具层，使用硬掩模图案作为蚀刻阻挡层，在存储节点孔内部的模具层的侧壁上形成阻挡层，蚀刻存储节点孔下方的蚀刻停止层，在其内部形成存储节点存储节点孔，以及去除硬掩模图案，模具层和阻挡层。

Public/Granted literature

US20130164903A1 METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE Public/Granted day:2013-06-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）