Invention Grant
US08728896B2 Embedded sigma-shaped semiconductor alloys formed in transistors by applying a uniform oxide layer prior to cavity etching
有权
通过在腔蚀刻之前施加均匀的氧化物层，形成在晶体管中的嵌入式σ形半导体合金
- Patent Title: Embedded sigma-shaped semiconductor alloys formed in transistors by applying a uniform oxide layer prior to cavity etching
- Patent Title (中): 通过在腔蚀刻之前施加均匀的氧化物层，形成在晶体管中的嵌入式σ形半导体合金
-
Application No.: US13238180Application Date: 2011-09-21
-
Publication No.: US08728896B2Publication Date: 2014-05-20
- Inventor: Stephan Kronholz , Andreas Ott , Ina Ostermay
- Applicant: Stephan Kronholz , Andreas Ott , Ina Ostermay
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Priority: DE102010063772 20101221
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/8234 ; H01L21/8238
Abstract:
When forming sophisticated transistors requiring an embedded semiconductor alloy, the cavities may be formed with superior uniformity on the basis of, for instance, crystallographically anisotropic etch steps by providing a uniform oxide layer in order to reduce process related fluctuations or queue time variations. The uniform oxide layer may be formed on the basis of an APC control regime.
Public/Granted literature
Information query
IPC分类:
