Invention Grant
- Patent Title: Mixed valent oxide memory and method
- Patent Title (中): 混合氧化物记忆和方法
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Application No.: US13915373Application Date: 2013-06-11
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Publication No.: US08728899B2Publication Date: 2014-05-20
- Inventor: Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Memory devices and methods of forming include a mixed valent oxide located between a first electrode and a second electrode. Implantation of a metal below a surface of one of the electrodes allows formation of the mixed valent oxide with a direct interface to the electrode. An intermetallic oxide can be subsequently formed between the mixed valent oxide and the electrode by annealing the structure.
Public/Granted literature
- US20130273690A1 MIXED VALENT OXIDE MEMORY AND METHOD Public/Granted day:2013-10-17
Information query
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