Invention Grant
US08728901B2 Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitors
有权
制造镶嵌自对准铁电随机存取存储器（F-RAM）的方法，同时形成侧壁铁电电容器
- Patent Title: Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitors
- Patent Title (中): 制造镶嵌自对准铁电随机存取存储器（F-RAM）的方法，同时形成侧壁铁电电容器
-
Application No.: US14010134Application Date: 2013-08-26
-
Publication No.: US08728901B2Publication Date: 2014-05-20
- Inventor: Shan Sun , Thomas Davenport , John Cronin
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for fabricating a non-volatile, ferroelectric random access memory (F-RAM) device is described. In one embodiment, the method includes forming an opening in an insulating layer over a surface of a substrate, and forming bottom electrode spacers proximal to sidewalls of the opening. Next, a ferroelectric dielectric layer is formed in the opening over the surface of the substrate and between the bottom electrode spacers, and a pair of top electrodes is formed within the opening comprising first and second side portions displaced laterally from respective ones of the bottom electrode spacers by the ferroelectric dielectric layer.
Public/Granted literature
Information query
IPC分类:
